vesd05a1c-02z document number 81691 rev. 1.3, 22-sep-08 vishay semiconductors www.vishay.com 1 2027 8 1 2 20516 2 for technical support, please contact: esd-protection@vishay.com esd-protection diode in sod923 features ? single-line esd-protection device ? esd-immunity acc. iec 61000-4-2 > 30 kv contact discharge > 30 kv air discharge ? tiny sod923 package ? package height = 0.4 mm ? typ. capacitance 38 pf (v r = 2.5 v; f = 1 mhz) ? leakage current < 0.2 a (v r = 5 v) ? lead (pb)-free component ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec marking (example only) bar = cathode marking x = date code y = type code (see table below) ordering information package data absolute maximum ratings * please see document ?vishay green and halogen-free definitions (5-2008)? http://www.vishay.com/doc?99902 20279 xy device name ordering code taped units per reel (8 mm tape on 7" reel) minimum order quantity vesd05a1c-02z vesd05a1c-02z-gs08 8000 8000 device name package name type code weight molding compound flammability rating moisture sensitivity level soldering conditions vesd05a1c-02z sod923 d 0.45 mg ul 94 v-0 msl level 1 (according j-std-020) 260 c/10 s at terminals rating test condition symbol value unit peak pulse current acc. iec 61000-4-5, t p = 8/20 s/single shot i ppm 8a peak pulse power acc. iec 61000-4-5, t p = 8/20 s/single shot p pp 80 w esd immunity contact discharge acc. iec 61000-4-2; 10 pulses v esd 30 kv air discharge acc. iec 61000-4-2; 10 pulses v esd 30 kv operating temperature junction temperature t j - 40 to + 125 c storage temperature t stg - 55 to + 150 c
www.vishay.com 2 document number 81691 rev. 1.3, 22-sep-08 vesd05a1c-02z vishay semiconductors for technical support, please c ontact: esd-protection@vishay.com bias-mode (bi directional as ymmetrical protection mode) with the vesd05a1c-02z one signal- or data-lines (l1) can be protected against voltage transients. with pin 1 connected to ground and pin 2 connected to a signal - or data-line which has to be protected. as long as the voltage level on the data- or signal-line is between 0 v (ground level) and the specified m aximum r everse w orking v oltage ( v rwm ) the protection diode between data line and ground offers a high isolation to the ground line. the protection device behaves like an open switch. as soon as any positive transient voltage signal exceeds the break through voltage level of the protection diode, the diode becomes conductive and shorts the tr ansient current to ground. now the protection device behaves like a closed switch. the c lamping v oltage ( v c ) is defined by the br eakthrough v oltage ( v br ) level plus the voltage drop at the series impedance (res istance and inductance) of the protection device. any negative transient signal will be clamped accordingly. t he negative transient curr ent is flowing in the forward direction of the protection diode. the low f orward v oltage ( v f ) clamps the negative transient close to the ground level. due to the different clamping levels in forward and reverse direction the vesd05a1c-02z clamping behaviour is bi directional and as ymmetrical ( bias ). electrical characteristics ratings at 25 c, ambient temperature, unless otherwise specified vesd05a1c-02z bias mode (between pin 1 and pin 2) l1 202 8 0 1 2 parameter test conditions/remarks symbol min. ty p. max. unit protection paths number of li nes which can be protected n lines 1 lines reverse stand off voltage at i r = 1 a v rwm 5v reverse current at v r = 5 v i r 0.1 1 a reverse break down voltage at i r = 1 ma v br 6.0 6.7 8 v reverse clamping voltage at i pp = 1 a v c 7.1 8 v at i pp = i ppm = 8 a v c 9.3 10 v forward clamping voltage at i pp = 0.2 a v f 0.95 1.2 v at i pp = 1 a v f 1.1 1.5 v at i pp = i ppm = 8 a v f 1.9 v capacitance at v r = 0 v; f = 1 mhz c d 63 75 pf at v r = 2.5 v; f = 1 mhz c d 38 pf
vesd05a1c-02z document number 81691 rev. 1.3, 22-sep-08 vishay semiconductors www.vishay.com 3 for technical support, please contact: esd-protection@vishay.com typical characteristics t amb = 25 c, unless otherwise specified figure 1. esd discharge current wave form acc. iec 61000-4-2 (330 /150 pf) figure 2. 8/20 s peak pulse current wave form acc. iec 61000-4-5 figure 3. typical capacitance c d vs. reverse voltage v r 0 % 20 % 40 % 60 % 8 0 % 100 % 120 % - 10 0 10 20 30 40 50 60 70 8 0 90 100 time (ns) discharge c u rrent i esd rise time = 0.7 ns to 1 ns 53 % 27 % 20557 0 % 20 % 40 % 60 % 8 0 % 100 % 010203040 time ( s) i ppm 20 s to 50 % 8 s to 100 % 2054 8 0 10 20 30 40 50 60 70 0123456 f = 1 mhz 20710 c d (pf) v r ( v ) figure 4. typical forward current i f vs. forward voltage v f figure 5. typical reverse voltage v r vs. reverse current i r figure 6. typical peak clamping voltage vs. peak pulse current i pp 0.001 0.01 0.1 1 10 100 0.5 0.6 0.7 0. 8 0.9 20511 i f (ma) v f ( v ) 0 1 2 3 4 5 6 7 8 0.01 0.1 1 10 100 1000 10000 20712 v r ( v ) i r ( a) - 4 - 2 0 2 4 6 8 10 12 01234567 8 910 v c positi v e s u rge negati v e s u rge 20713 v c ( v ) i pp (a) meas u red acc. iec 6100-4-5 ( 8 /20 s - w a v e form)
www.vishay.com 4 document number 81691 rev. 1.3, 22-sep-08 vesd05a1c-02z vishay semiconductors for technical support, please c ontact: esd-protection@vishay.com figure 7. typical clamping perf ormance at 8 kv contact discharge (acc. iec 61000-4-2) figure 8. typical clamping perf ormance at 8 kv contact discharge (acc. iec 61000-4-2) figure 9. typical peak clamping voltage at esd contact discharge (acc. iec 61000-4-2) - 30 - 20 - 10 0 10 20 30 40 50 60 - 100 10203040506070 8 090 acc. iec 61000-4-2 + 8 k v contact discharge 20714 v c-esd ( v ) t (ns) - 50 - 40 - 30 - 20 - 10 0 10 20 30 40 - 10 0 10 20 30 40 50 60 70 8 090 acc. iec 61000-4-2 - 8 k v contact discharge 20715 v c-esd ( v ) t (ns) - 200 - 150 - 100 - 50 0 50 100 150 200 0 5 10 15 20 25 30 35 positi v e discharge negati v e discharge 20716 v c-esd ( v ) v esd (k v ) acc. iec 61000-4-2 contact discharge v c-esd
vesd05a1c-02z document number 81691 rev. 1.3, 22-sep-08 vishay semiconductors www.vishay.com 5 for technical support, please contact: esd-protection@vishay.com package dimensions in millimeter s (inches): sod923 foot print recommendation: doc u ment no.: s 8 - v -3 88 0.05-001 (4) re v . 1 - date: 05.j u ly.2006 0. 8 5 [0.033] 0.75 [0.030] 1.1 [0.043] 0.9 [0.035] 0.25 [0.010] 0.15 [0.006] 0.65 [0.026] 0.55 [0.022] 0.13 [0.005] 0.07 [0.003] max. 0.05 [0.002] 0.39 [0.015] 0.37 [0.015] max. 0.41 [0.016] 5 degr ee ref 0.35 [0.014] 0.9 [0.035] 0.3 [0.012] 20096
www.vishay.com 6 document number 81691 rev. 1.3, 22-sep-08 vesd05a1c-02z vishay semiconductors for technical support, please contact: esd-protection@vishay.com ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively. 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa. 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not co ntain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
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